AO4818 30v dual n-channel mosfet general description product summary v ds i d (at v gs =10v) 8a r ds(on) (at v gs =10v) <19m w r ds(on) (at v gs = 4.5v) < 23m w esd protected 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl w 2 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 90 40 maximum junction-to-ambient a t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c a i d 8 6.5 48 mj avalanche current c 18 a 19 the AO4818 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applica tions. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v v 20 gate-source voltage drain-source voltage 30 c/w r q ja 48 74 62.5 c thermal characteristics units parameter typ max 1.3 t a =70c junction and storage temperature range -55 to 150 g ds g ds g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view soic-8 top view bottom view pin1 rev 7 : feb. 2011 www.aosmd.com page 1 of 6
AO4818 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 30 a 15.5 19 t j =125c 21 25 18.5 23 m w g fs 30 s v sd 0.75 1 v i s 2.5 a c iss 600 740 888 pf c oss 77 110 145 pf c rss 50 82 115 pf r g 0.5 1.1 1.7 w q g (10v) 12 15 18 nc q g (4.5v) 6 7.5 9 nc q gs 2.5 nc q gd 3 nc t d(on) 5 ns t r 3.5 ns t d(off) 19 ns t f 3.5 ns t rr 6 8 10 ns q rr 14 18 22 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8a reverse transfer capacitance i f =8a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =8a v gs =4.5v, i d =4a v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =8a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 7: feb. 2011 www.aosmd.com page 2 of 6
AO4818 typical electrical and thermal characteristics 17 52 10 0 18 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =4a v gs =10v i d =8a 10 15 20 25 30 35 40 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 3.5v 10v 3v 4v rev 7: feb. 2011 www.aosmd.com page 3 of 6
AO4818 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =8a 1 10 100 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area (note f) 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10 m s 10ms rev 7: feb. 2011 www.aosmd.com page 4 of 6
AO4818 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90c/w rev 7: feb. 2011 www.aosmd.com page 5 of 6
AO4818 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 7: feb. 2011 www.aosmd.com page 6 of 6
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